SiC CVD Coating
Silicon Carbide Coated Susceptors for CMOS & MOCVD
Susceptors for gas phase deposition are machined from our semiconductor purity graphite then coated with SiC using our CVD process to the customer’s specifications.
The graphite substrate has been specifically chosen for the best CTE match between graphite to SiC.
Thickness generally ranges from 75 to 100microns.
We specialize in the pancake type susceptor but have enhanced our capabilities to produce most common susceptors.
We also provide custom designed products to meet your specialized needs.
Silicon Carbide CVD Coating
CVD = (Chemical Vapor Deposition)
Definition: Silicon carbide is a compound of Silicon and Carbon with chemical formula SiC.
Today SiC coated graphite is widely used in high-temperature/high-voltage semiconductor electronics.
We has established an unparalleled excellence in the production of precision machined high purity Semiconductor grade CVD silicon carbide coated graphite.
We specialize in graphite carriers, susceptors, satellites, wafers and customized components focusing on the solar silica, LED, semiconductor, MOCVD.
Our flexibility also enables us to render many possible configurations, catering to the research and development and academia arenas.
The result is a high quality part that is virtually inert to all process gases and chemicals.
Our process ensured an excellent CTE match between sub straight and coating causing greater stability and longer production cycle life.
Excellent resistance to wear and abrasion
Excellent resistance to corrosion, oxidation and erosion
Outstanding performance at high operating temperatures 1400°C (up to 1700 °C in inert atmosphere)
Superior flatness capability
Non particle generating
Ultra-Pure Graphite Sub straight 99.9995%
Outstanding thermal conductivity
Thermal Shock Resistant