Silicon carbide (SiC)

Posted by ENERGYN
2014.11.04 20:42 생산용역/화학기상증착(CVD)

Silicon carbide (SiC) has long been recognized as an attractive mirror material due to its superior mechanical and

 thermal properties when compared to conventional optical materials. However, the material properties of silicon carbide,

which make the material attractive from a design standpoint, have often precluded its use when low cost and rapid

delivery of an optical mirror were required.

It is normally expensive to produce a lightweighted, super-polished SiC substrate, and the lead-time for obtaining

a finished substrate used to be several months. However, working in conjunction a material provider, and using

deterministic finishing techniques for the rapid fabrication of lightweight silicon carbide optics,

Energyn can produce high-quality SiC mirrors in a much shorter time as compared to traditional techniques.








'생산용역 > 화학기상증착(CVD)' 카테고리의 다른 글

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화학기상증착(CVD Tech Outsourcing)

Posted by ENERGYN
2014.07.09 10:57 생산용역/화학기상증착(CVD)

SiC CVD Coating

Silicon Carbide Coated Susceptors for CMOS & MOCVD

Susceptors for gas phase deposition are machined from our semiconductor purity graphite then coated with SiC using our CVD process to the customer’s specifications.

The graphite substrate has been specifically chosen for the best CTE match between graphite to SiC.

Thickness generally ranges from 75 to 100microns.

We specialize in the pancake type susceptor but have enhanced our capabilities to produce most common susceptors.

We also provide custom designed products to meet your specialized needs.



Silicon Carbide CVD Coating

CVD = (Chemical Vapor Deposition)

Definition: Silicon carbide is a compound of Silicon and Carbon with chemical formula SiC.

Today SiC coated graphite is widely used in high-temperature/high-voltage semiconductor electronics.



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We has established an unparalleled excellence in the production of precision machined high purity Semiconductor grade CVD silicon carbide coated graphite.

We specialize in graphite carriers, susceptors, satellites, wafers and customized components focusing on the solar silica, LED, semiconductor, MOCVD.


Our flexibility also enables us to render many possible configurations, catering to the research and development and academia arenas.

The result is a high quality part that is virtually inert to all process gases and chemicals.

Our process ensured an excellent CTE match between sub straight and coating causing greater stability and longer production cycle life.



Excellent resistance to wear and abrasion

Excellent resistance to corrosion, oxidation and erosion

Outstanding performance at high operating temperatures 1400°C (up to 1700 °C in inert atmosphere)

Superior flatness capability

Non particle generating

Ultra-Pure Graphite Sub straight 99.9995%

Outstanding thermal conductivity

Dimensional Stability

Thermal Shock Resistant




'생산용역 > 화학기상증착(CVD)' 카테고리의 다른 글

Silicon carbide (SiC)  (0) 2014.11.04
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